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By Walsh J.L.
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Extra info for Boundary values of an analytic function and the Tchebycheff method of approximation
The number of + denotes the ranking order of the performance indicator describing a particular property. P indicates that the method yields information of the physical structure. 1 Ya ++ ++ ++ + i PPm PPb small available physical structure considerable moderate small high moderate low moderatc good excellent moderate many + ++ (++I + (++I ++ ++ (+++I ++ , I (+++I ++ t +++ +++ I (k++> t + (++I (++I ++ P + +ti ++ + +t + ++ +++ i li + ++ +t (PI (+++I ++ (+I (+) >B 1 He RBS ++ ++ , . ++ ++ ++ ++ +~t +t + + (++'I SIMS The most important advantage of SIMS in chemical surface characterization is undoubtedly its superior sensitivity when compared with XPS or AES (Table 1).
A partial list of chemical compounds formed at bombardment of a solid benzene target at 77 K by a beam of fast ions. Altogether 36 compounds were detected by gas chromatography (Pignataro, 1992, Scheme 1). In SIMS, the situation with respect to sample damage during signal emission is basically different from XPS and AES considered above. , emission of atomic species from the sample, caused by the incident beam. The method is therefore always destructive. , the emitted species originate from regions without previous damage.
The conventional method of eroding the surface is ion bombardment (sputtering; King, 1992). The oldest and still most common method of depth profiling is based on repeated measurements of Auger spectra after successively increasing the time of sputtering the target. Recently, the Auger signals are often replaced by XPS, usually in order to simplitji the interpretation. By replacing the electron signal by SIMS, the elemental sensitivity of the analysis is increascd. ,studies of surface enrichment of small amounts of bulk impurities.