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6) Fig. 3 illuminated. mV) p+-p-p+ and Ge:Ga (Courtesy Haegel and White, Ref. 6) Fig. 4 Mesh plot of the relative free hole increase as a function of position and time in a homogeneously illuminated p+-p-p+ Ga:Ge photoconductor. The illumination is turned on at 10-8 s. , Ref. 8) Fig. urn, B) 100 _tm, and C) 40 ktm for constant with illumination. , Ref. 8) Fig. 6 Schematic relative response of Si:B, Ge:Be, Ge:Ga and uniaxially stressed Ge:Ga photoconductors. Fig. 7 Tape automated bonding focal plane module of the integrator and multiplexer chips for a linear 32 pixel Ge:Ga array.

8 Stress rig for uniaxially stressing Ge:Ga, a: adjusting screw, b: flat springs, c: fulcrum, d: body, e: fulcrum 3O holding pin, f: Ge:Ga photoconductor, g: stressing pistons, h: detector positioning screw. , Ref. 63) Fig. 9 Completed 5×5 stressed Ge:Ga array with light collecting cones. , Ref. 25) Fig. 10 Logarithm of the resistivity as a function of T - _/2 for ten selected NTD Ge crystals. The neutron dose and the resulting dopant concentrations are listed in Table II. (Courtesy J. Beeman, Lawrence Berkeley Laboratory) Fig.

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